By S.Turner

CERN (Series), 95-06. 2 volumes : illustrations ; 30 cm. ISBN vol. 1: 9290830786 ISBN vol. 2: 9290830794

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The efficiency of gallium arsenide Schottky barrier solar cells has been increased from 9% to 14% in this way. 7. OHMIC CONTACTS In semiconductor technology we fre~uently need contacts to a device or to a sample of semiconductor which allow the current SURFACES AND INTERFACES IN SEMICONDUCTOR TECHNOLOGY 23 flowing to be determined by the properties of the device or semiconductor specimen rather than by the contacts. This requires that the resistance of the contacts should be negligible compared with that of the device or specimen, and we call such contacts 'ohmic' contacts.

Bias, which gives the differential capacitance C (= dQ/dV). The differential capacitance is therefore not constant but depends on the reverse bias voltage. In the case of a p-n junction, the depletion region extends further into the less heavily doped side, so that for a p+_n junction, for instance, the width of the depletion region (and hence its differential capac~tance) is determined by the donor density in the n-side. A measurement of the differential capacitance as a function of bias enables the donor density to be determined.

Bibliography The following books and papers may be found useful for further reading: 28 E. H. Grove, Physics and Technology of Semiconductor Devices, New York, John Wiley (1961). Grover, Semiconductor Surfaces, Amsterdam, North-Holland (1965). Kooi, The Surface Properties of Oxidized Silicon, Eindhoven, Philips Technical Press (1961). , 38, 149 (1959). Larrabee (Eds), Characterization of Solid Surfaces, New York, Plenum Press (1914). Phys. D. ), 2,1153 (1910). Rhoderick, Metal-Semiconductor Contacts, Oxford, Claredon Press (1911).

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CAS-CERN Accelerator School - Advanced Accelerator Physics (VOL 2) by S.Turner

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