CERN (Series), 95-06. 2 volumes : illustrations ; 30 cm. ISBN vol. 1: 9290830786 ISBN vol. 2: 9290830794
Read or Download CAS-CERN Accelerator School - Advanced Accelerator Physics (VOL 2) PDF
Best physics books
I actually loved this ebook. Its enjoyable, its wonderful and it explains every little thing you want to understand to start with MATLAB.
This quantity is devoted to the only hundredth anniversary of the e-book of Hermann Minkowski's paper "Space and Time" in 1909. His paintings at the spacetime illustration of detailed relativity had a huge effect at the 20th century physics to the level that glossy physics will be most unlikely with no the inspiration of spacetime.
A NATO complex stories Institute used to be held June 12-23, 1978, on the college of Wisconsin in Madison, Wisconsin. It used to be a topical Institute in theoretical nuclear physics and had the a few what novel characteristic of focussing now not on a unmarried subject yet on heavily allied ones: pion-nucleus and heavy-ion physics.
- Physics of the Sun [Vol 1 - The Solar Interior]
- The Atom and the Apple, 12 Tales from Contemporary Physics
- Handbook on the Physics and Chemistry of Rare Earths. vol.34
- Transmission Electron Microscopy: Physics of Image Formation and Microanalysis
- Die Kunst of Phonons: Lectures from the Winter School of Theoretical Physics
- Thermal spraying Practice theory and application
Additional resources for CAS-CERN Accelerator School - Advanced Accelerator Physics (VOL 2)
The efficiency of gallium arsenide Schottky barrier solar cells has been increased from 9% to 14% in this way. 7. OHMIC CONTACTS In semiconductor technology we fre~uently need contacts to a device or to a sample of semiconductor which allow the current SURFACES AND INTERFACES IN SEMICONDUCTOR TECHNOLOGY 23 flowing to be determined by the properties of the device or semiconductor specimen rather than by the contacts. This requires that the resistance of the contacts should be negligible compared with that of the device or specimen, and we call such contacts 'ohmic' contacts.
Bias, which gives the differential capacitance C (= dQ/dV). The differential capacitance is therefore not constant but depends on the reverse bias voltage. In the case of a p-n junction, the depletion region extends further into the less heavily doped side, so that for a p+_n junction, for instance, the width of the depletion region (and hence its differential capac~tance) is determined by the donor density in the n-side. A measurement of the differential capacitance as a function of bias enables the donor density to be determined.
Bibliography The following books and papers may be found useful for further reading: 28 E. H. Grove, Physics and Technology of Semiconductor Devices, New York, John Wiley (1961). Grover, Semiconductor Surfaces, Amsterdam, North-Holland (1965). Kooi, The Surface Properties of Oxidized Silicon, Eindhoven, Philips Technical Press (1961). , 38, 149 (1959). Larrabee (Eds), Characterization of Solid Surfaces, New York, Plenum Press (1914). Phys. D. ), 2,1153 (1910). Rhoderick, Metal-Semiconductor Contacts, Oxford, Claredon Press (1911).
CAS-CERN Accelerator School - Advanced Accelerator Physics (VOL 2) by S.Turner