By G. Venkataraman

ISBN-10: 0863113141

ISBN-13: 9780863113147

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S. Jones, and B. A. Joyce. Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy. Surf. Sci. 387: 213–226, 1997. [36] Y. Garreau, K. A¨d, ¨ M. Sauvage-Simkin, R. Pinchaux, C. F. McConville, T. S. Jones, J. L. Sudijono, and E. S. Tok. Stoichiometry and discommensuration on Inx Ga1−x As/GaAs(001) reconstructed surfaces: A quantitative x-ray diffusescattering study. Phys. Rev. B 58: 16177–16185, 1998. [37] A. G. de Oliveira, S. D. Parker, R. Droopad, and B. A. Joyce.

Jones, J. L. Sudijono, and E. S. Tok. Stoichiometry and discommensuration on Inx Ga1−x As/GaAs(001) reconstructed surfaces: A quantitative x-ray diffusescattering study. Phys. Rev. B 58: 16177–16185, 1998. [37] A. G. de Oliveira, S. D. Parker, R. Droopad, and B. A. Joyce. A generalized model for the reconstruction of {001} surfaces of III-V compound semiconductors based on a RHEED study of InSb(001). Surf. Sci. 227: 150–156, 1990. 42 [38] M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, M. B. V´ ´eron, J.

W. Evans and M. C. Bartelt. Nucleation and growth in metal-on-metal homoepitaxy: Rate-equations, simulations and experiments. J. Vac. Sci. Technol. A 12: 1800–1808, 1994. [63] M. C. Bartelt and J. W. Evans. Exact island-size distributions for submonolayer deposition: Influence of correlations between island size and separation. Phys. Rev. B 54: R17359–R17362, 1996. [64] J. G. Amar and F. Family. Critical clustersSize: Island morphology and size distribution in submonolayer epitaxial growth. Phys.

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Chandrasekar and His Limit by G. Venkataraman


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